Effects
of Hydrogen Partial Pressure in the Annealing
Process on Graphene Growth
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Abstract
Graphene domains with different sizes
and densities were successfully
grown on Cu foils with use of a chemical vapor deposition method.
We investigated the effects of volume ratios of argon to hydrogen
during the annealing process on graphene growth, especially as a function
of hydrogen partial pressure. The mean size and density of graphene
domains increased with an increase in hydrogen partial pressure during
the annealing time. In addition, we found that annealing with use
of only hydrogen gas resulted in snowflake-shaped carbon aggregates.
Energy-dispersive X-ray spectroscopy (EDX) and high-resolution photoemission
spectroscopy (HRPES) revealed that the snowflake-shaped carbon aggregates
have stacked sp<sup>2</sup> carbon configuration. With these observations,
we demonstrate the key reaction details for each growth process and
a proposed growth mechanism as a function of the partial pressure
of H<sub>2</sub> during the annealing process