Low-Temperature Growth of Large-Area Heteroatom-Doped
Graphene Film
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Abstract
Large-area heteroatom-doped graphene
films are greatly attractive
materials for various applications, such as electronics, fuel cells,
and supercapacitors. Currently, these graphene films are prepared
by the high-temperature chemical vapor deposition method, which produces
a low doping level in N-doped graphene (NG) and fails in the synthesis
of large-area S-doped graphene (SG) film. Here, we report a low-temperature
method toward the synthesis of large-area heavily heteroatom-doped
graphene on copper foils via a free radical reaction using polyhalogenated
aromatic compounds. This low-temperature method allows the synthesis
of single-layer NG film with a high nitrogen content, and the production
of large-area SG film for the first time. Both doped graphenes show
enhanced electrical properties in field effect transistors as well
as high-performance electrocatalysts for fuel cells