Polarity-Reversed
Robust Carrier Mobility in Monolayer
MoS<sub>2</sub> Nanoribbons
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Abstract
Using first-principles calculations
and deformation potential theory,
we investigate the intrinsic carrier mobility (μ) of monolayer
MoS<sub>2</sub> sheet and nanoribbons. In contrast to the dramatic
deterioration of μ in graphene upon forming nanoribbons, the
magnitude of μ in armchair MoS<sub>2</sub> nanoribbons is comparable
to its sheet counterpart, albeit oscillating with ribbon width. Surprisingly,
a room-temperature transport polarity reversal is observed with μ
of hole (h) and electron (e) being 200.52 (h) and 72.16 (e) cm<sup>2</sup> V<sup>–1 </sup>s<sup>–1</sup> in sheet, and
49.72 (h) and 190.89 (e) cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> in 4 nm nanoribbon. The high and robust μ and
its polarity reversal are attributable to the different characteristics
of edge states inherent in MoS<sub>2</sub> nanoribbons. Our study
suggests that width reduction together with edge engineering provide
a promising route for improving the transport properties of MoS<sub>2</sub> nanostructures