Direct Growth of High-Quality Graphene on High‑κ Dielectric SrTiO₃ Substrates

Abstract

High-quality monolayer graphene was synthesized on high-κ dielectric single crystal SrTiO₃ (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO₂-gated FET and carrier motilities of approximately 870–1050 cm²·V^–1·s^–1 in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays