Graphene/MoS<sub>2</sub> Hybrid Technology for Large-Scale
Two-Dimensional Electronics
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Abstract
Two-dimensional (2D) materials have
generated great interest in
the past few years as a new toolbox for electronics. This family of
materials includes, among others, metallic graphene, semiconducting
transition metal dichalcogenides (such as MoS<sub>2</sub>), and insulating
boron nitride. These materials and their heterostructures offer excellent
mechanical flexibility, optical transparency, and favorable transport
properties for realizing electronic, sensing, and optical systems
on arbitrary surfaces. In this paper, we demonstrate a novel technology
for constructing large-scale electronic systems based on graphene/molybdenum
disulfide (MoS<sub>2</sub>) heterostructures grown by chemical vapor
deposition. We have fabricated high-performance devices and circuits
based on this heterostructure, where MoS<sub>2</sub> is used as the
transistor channel and graphene as contact electrodes and circuit
interconnects. We provide a systematic comparison of the graphene/MoS<sub>2</sub> heterojunction contact to more traditional MoS<sub>2</sub>-metal junctions, as well as a theoretical investigation, using density
functional theory, of the origin of the Schottky barrier height. The
tunability of the graphene work function with electrostatic doping
significantly improves the ohmic contact to MoS<sub>2</sub>. These
high-performance large-scale devices and circuits based on this 2D
heterostructure pave the way for practical flexible transparent electronics