Micropatterned
Single-Walled Carbon Nanotube Electrodes for Use in High-Performance
Transistors and Inverters
- Publication date
- Publisher
Abstract
We
demonstrated the solution-processed single-walled carbon nanotube
(SWNT) source–drain electrodes patterned using a plasma-enhanced
detachment patterning method for high-performance organic transistors
and inverters. The high-resolution SWNT electrode patterning began
with the formation of highly uniform SWNT thin films on a hydrophobic
silanized substrate. The SWNT source–drain patterns were then
formed by modulating the interfacial energies of the prepatterned
elastomeric mold and the SWNT thin film using oxygen plasma. The SWNT
films were subsequently selectively delaminated using a rubber mold.
The patterned SWNTs could be used as the source–drain electrodes
for both n-type PTCDI-C8 and p-type pentacene field-effect transistors
(FETs). The n- and p-type devices exhibited good and exactly matched
electrical performances, with a field-effect mobility of around 0.15
cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> and an
ON/OFF current ratio exceeding 10<sup>6</sup>. The single electrode
material was used for both the n and p channels, permitting the successful
fabrication of a high-performance complementary inverter by connecting
a p-type pentacene FET to an n-type PTCDI-C8 FET. This patterning
technique was simple, inexpensive, and easily scaled for the preparation
of large-area electrode micropatterns for flexible microelectronic
device fabrication