A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm²/V·s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors

Abstract

By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of ∼10 cm²/V·s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor–acceptor (D–A) polymer semiconductor: poly­(thienoisoindigo-<i>alt</i>-naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm²/V·s, by using PTIIG-Np with a high-<i>k</i> gate dielectric poly­(vinylidenefluoride-trifluoroethylene) (P­(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics