Atomically Engineered Metal–Insulator Transition
at the TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface
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Abstract
We demonstrate that the atomic boundary
conditions of
simple binary
oxides can be used to impart dramatic changes of state. By changing
the substrate surface termination of LaAlO<sub>3</sub> (001) from
AlO<sub>2</sub> to LaO, the room-temperature sheet conductance of
anatase TiO<sub>2</sub> films are increased by over 3 orders of magnitude,
transforming the intrinsic insulating state to a high mobility metallic
state, while maintaining excellent optical transparency
