High Thermal
Stability Solution-Processable Narrow-Band
Gap Molecular Semiconductors
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Abstract
A series
of narrow-band gap conjugated molecules with specific
fluorine substitution patterns has been synthesized in order to study
the effect of fluorination on bulk thermal stability. As the number
of fluorine substituents on the backbone increase, one finds more
thermally robust bulk structures both under inert and ambient conditions
as well as an increase in phase transition temperatures in the solid
state. When integrated into field-effect transistor devices, the molecule
with the highest degree of fluorination shows a hole mobility of 0.15
cm<sup>2</sup>/V·s and a device thermal stability of >300
°C.
Generally, the enhancement in thermal robustness of bulk organization
and device performance correlates with the level of C–H for
C–F substitution. These findings are relevant for the design
of molecular semiconductors that can be introduced into optoelectronic
devices to be operated under a wide range of conditions