Controlling
Dielectric and Relaxor-Ferroelectric Properties for Energy Storage
by Tuning Pb<sub>0.92</sub>La<sub>0.08</sub>Zr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Film Thickness
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Abstract
The energy storage
properties of Pb<sub>0.92</sub>La<sub>0.08</sub>Zr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (PLZT) films grown via pulsed laser
deposition were evaluated at variable film thickness of 125, 250,
500, and 1000 nm. These films show high dielectric permittivity up
to ∼1200. Cyclic <i>I</i>–<i>V</i> measurements were used to evaluate the dielectric properties of
these thin films, which not only provide the total electric displacement,
but also separate contributions from each of the relevant components
including electric conductivity (<i>D1</i>), dielectric capacitance (<i>D2</i>), and relaxor-ferroelectric domain switching polarization (<i>P</i>). The results show that, as the film thickness increases,
the material transits from a linear dielectric to nonlinear relaxor-ferroelectric.
While the energy storage per volume increases with the film thickness,
the energy storage efficiency drops from ∼80% to ∼30%.
The PLZT films can be optimized for different energy storage applications
by tuning the film thickness to optimize between the linear and nonlinear
dielectric properties and energy storage efficiency
