Highly Uniform and Stable n‑Type Carbon Nanotube
Transistors by Using Positively Charged Silicon Nitride Thin Films
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Abstract
Air-stable n-doping
of carbon nanotubes is presented by utilizing SiN<sub><i>x</i></sub> thin films deposited by plasma-enhanced chemical vapor deposition.
The fixed positive charges in SiN<sub><i>x</i></sub>, arising
from <sup>+</sup>SiN<sub>3</sub> dangling bonds induce strong
field-effect doping of underlying nanotubes. Specifically, an electron
doping density of ∼10<sup>20</sup> cm<sup>–3</sup> is
estimated from capacitance voltage measurements of the fixed charge
within the SiN<sub><i>x</i></sub>. This high doping concentration
results in thinning of the Schottky barrier widths at the nanotube/metal
contacts, thus allowing for efficient injection of electrons by tunnelling.
As a proof-of-concept, n-type thin-film transistors using random networks
of semiconductor-enriched nanotubes are presented with an electron
mobility of ∼10 cm<sup>2</sup>/V s, which is comparable to
the hole mobility of as-made p-type devices. The devices are highly
stable without any noticeable change in the electrical properties
upon exposure to ambient air for 30 days. Furthermore, the devices
exhibit high uniformity over large areas, which is an important requirement
for use in practical applications. The work presents a robust approach
for physicochemical doping of carbon nanotubes by relying on field-effect
rather than a charge transfer mechanism