Correlation of Electrical and Structural Properties
of Single As-Grown GaAs Nanowires on Si (111) Substrates
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Abstract
We present the results of the study
of the correlation between the electrical and structural properties
of individual GaAs nanowires measured in their as-grown geometry.
The resistance and the effective charge carrier mobility were extracted
for several nanowires, and subsequently, the same nano-objects were
investigated using X-ray nanodiffraction. This revealed a number of
perfectly stacked zincblende and twinned zincblende units separated
by axial interfaces. Our results suggest a correlation between the
electrical parameters and the number of intrinsic interfaces
