Temperature-Dependent Resonance Energy Transfer from
Semiconductor Quantum Wells to Graphene
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Abstract
Resonance energy transfer (RET) has
been employed for interpreting
the energy interaction of graphene combined with semiconductor materials
such as nanoparticles and quantum-well (QW) heterostructures. Especially,
for the application of graphene as a transparent electrode for semiconductor
light emitting diodes, the mechanism of exciton recombination processes
such as RET in graphene-semiconductor QW heterojunctions should be
understood clearly. Here, we characterized the temperature-dependent
RET behaviors in graphene/semiconductor QW heterostructures. We then
observed the tuning of the RET efficiency from 5% to 30% in graphene/QW
heterostructures with ∼60 nm dipole–dipole coupled distance
at temperatures of 300 to 10 K. This survey allows us to identify
the roles of localized and free excitons in the RET process from the
QWs to graphene as a function of temperature