An 8.68%
Efficiency Chemically-Doped-Free Graphene–Silicon
Solar Cell Using Silver Nanowires Network Buried Contacts
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Abstract
Graphene–silicon
(Gr-Si) heterojunction solar cells have
been recognized as one of the most low-cost candidates in photovoltaics
due to its simple fabrication process. However, the high sheet resistance
of chemical vapor deposited (CVD) Gr films is still the most important
limiting factor for the improvement of the power conversion efficiency
of Gr-Si solar cells, especially in the case of large device-active
area. In this work, we have fabricated a novel transparent conductive
film by hybriding a monolayer Gr film with silver nanowires (AgNWs)
network soldered by the graphene oxide (GO) flakes. This Gr-AgNWs
hybrid film exhibits low sheet resistance and larger direct-current
to optical conductivity ratio, quite suitable for solar cell fabrication.
An efficiency of 8.68% has been achieved for the Gr-AgNWs-Si solar
cell, in which the AgNWs network acts as buried contacts. Meanwhile,
the Gr-AgNWs-Si solar cells have much better stability than the chemically
doped Gr-Si solar cells. These results show a new route for the fabrication
of high efficient and stable Gr-Si solar cells