Revealing Surface States in In-Doped SnTe Nanoplates
with Low Bulk Mobility
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Abstract
Indium (In) doping in topological
crystalline insulator SnTe induces superconductivity, making In-doped
SnTe a candidate for a topological superconductor. SnTe nanostructures
offer well-defined nanoscale morphology and high surface-to-volume
ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates,
In<sub><i>x</i></sub>Sn<sub>1–<i>x</i></sub>Te, with <i>x</i> ranging from 0 to 0.1 and show they superconduct.
More importantly, we show that In doping reduces the bulk mobility
of In<sub><i>x</i></sub>Sn<sub>1–<i>x</i></sub>Te such that the surface states are revealed in magnetotransport
despite the high bulk carrier density. This is manifested by two-dimensional
linear magnetoresistance in high magnetic fields, which is independent
of temperature up to 10 K. Aging experiments show that the linear
magnetoresistance is sensitive to ambient conditions, further confirming
its surface origin. We also show that the weak antilocalization observed
in In<sub><i>x</i></sub>Sn<sub>1–<i>x</i></sub>Te nanoplates is a bulk effect. Thus, we show that nanostructures
and reducing the bulk mobility are effective strategies to reveal
the surface states and test for topological superconductors