Steep Subthreshold Swing n- and p‑Channel Operation
of Bendable Feedback Field-Effect Transistors with p<sup>+</sup>–i–n<sup>+</sup> Nanowires by Dual-Top-Gate Voltage Modulation
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Abstract
In
this study, we present the steep switching characteristics of bendable
feedback field-effect transistors (FBFETs) consisting of p<sup>+</sup>–i–n<sup>+</sup> Si nanowires (NWs) and dual-top-gate
structures. As a result of a positive feedback loop in the intrinsic
channel region, our FBFET features the outstanding switching characteristics
of an on/off current ratio of approximately 10<sup>6</sup>, and point
subthreshold swings (SSs) of 18–19 mV/dec in the n-channel
operation mode and of 10–23 mV/dec in the p-channel operation
mode. Not only can these devices operate in n- or p-channel modes,
their switching characteristics can also be modulated by adjusting
the gate biases. Moreover, the device maintains its steep SS characteristics,
even when the substrate is bent. This study demonstrates the promising
potential of bendable NW FBFETs for use as low-power components in
integrated circuits or memory devices