In this study, we demonstrate development
of p-Cu<sub>2</sub>O thin films through cathodic electrodeposition
technique at constant current of 0.1 mA/cm<sup>2</sup> on Cu, Al,
and indium tin oxide (ITO) substrates from basic CuSO<sub>4</sub> solution
containing Triton X-100 as the surfactant at 30–35 °C.
The optical and morphological characterizations of the semiconductors
have been carried out using UV–vis spectroscopy, X-ray diffraction
(XRD), scanning electron microscopy (SEM), and Raman spectroscopy.
The band gap energy of ∼2.1 eV is recorded, whereas SEM reveals
that the surface morphology is covered with Cu<sub>2</sub>O semiconductors.
XRD analyses confirm that with change in substrate, the size of Cu<sub>2</sub>O “cubic” crystallites decreases from ITO to
Al to Cu substrates. Photoelectrochemical characterizations under
dark and illuminated conditions have been carried out through linear
sweep voltammetry, chronoamperometry and electrochemical impedance
spectroscopic analysis. The photoelectrochemical reduction of water
(H<sub>2</sub>O → H<sub>2</sub>) in pH 4.9 aqueous solutions
over the different substrates vary in the order of Cu > Al >
ITO. The highest current of 4.6 mA/cm<sup>2</sup> has been recorded
over the Cu substrate even at a low illumination of 35 mW/cm<sup>2</sup>, which is significantly higher than the values (2.4 mA/cm<sup>2</sup> on Au coated FTO or 4.07 mA/cm<sup>2</sup> on Cu foil substrate
at an illumination of 100 mW/cm<sup>2</sup>) reported in literature