Direct Synthesis of Graphene Meshes and Semipermanent
Electrical Doping
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Abstract
Here we describe a new method for
the direct patterned synthesis
of graphene meshes on Cu foils that use self-assembled silica sphere
arrays as growth masks. Structural analyses based on electron microscopy
and Raman spectroscopy showed that the graphene meshes are mostly
single- or double-layer necks with empty holes that have abrupt edges.
On the basis of experimental observations, we proposed the model illustrating
the dissociation of carbon atoms at the Cu/silica interface through
catalytic hydrogenation of the graphene lattice. Moreover, our approach
can minimize problems associated with the graphene etching process,
including contamination and exposure to reactive plasma. This enables
stable electronic doping through covalent C–N bonds at the
edges of graphene meshes