Temperature-Dependent Raman Studies and Thermal Conductivity
of Few-Layer MoS<sub>2</sub>
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Abstract
We report on the temperature dependence
of in-plane E<sub>2g</sub> and out-of-plane A<sub>1g</sub> Raman modes
in high-quality few-layer
MoS<sub>2</sub> (FLMS) prepared using a high-temperature vapor-phase
method. The materials obtained were investigated using transmission
electron microscopy. The frequencies of these two phonon modes were
found to vary linearly with temperature. The first-order temperature
coefficients for E<sup>1</sup><sub>2g</sub> and A<sub>1g</sub> modes
were found to be (1.32 and 1.23) × 10<sup>–2</sup> cm<sup>–1</sup>/K, respectively. The thermal conductivity of the
suspended FLMS at room temperature was estimated to be ∼52
W/mK
