Quantitatively Enhanced
Reliability and Uniformity
of High‑κ Dielectrics on Graphene Enabled by Self-Assembled
Seeding Layers
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Abstract
The full potential of graphene in integrated circuits
can only
be realized with a reliable ultrathin high-κ top-gate dielectric.
Here, we report the first statistical analysis of the breakdown characteristics
of dielectrics on graphene, which allows the simultaneous optimization
of gate capacitance and the key parameters that describe large-area
uniformity and dielectric strength. In particular, vertically heterogeneous
and laterally homogeneous Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> stacks grown via atomic-layer deposition and seeded by a
molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic
monolayer exhibit high uniformities (Weibull shape parameter β
> 25) and large breakdown strengths (Weibull scale parameter, <i>E</i><sub>BD</sub> > 7 MV/cm) that are comparable to control
dielectrics grown on Si substrates
