Hopping Conduction in
Mn Ion-Implanted GaAs Nanowires
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Abstract
We report on temperature-dependent charge transport in
heavily
doped Mn<sup>+</sup>-implanted GaAs nanowires. The results clearly
demonstrate that the transport is governed by temperature-dependent
hopping processes, with a crossover between nearest neighbor hopping
and Mott variable range hopping at about 180 K. From detailed analysis,
we have extracted characteristic hopping energies and corresponding
hopping lengths. At low temperatures, a strongly nonlinear conductivity
is observed which reflects a modified hopping process driven by the
high electric field at large bias