Rational Design of Amorphous
Indium Zinc Oxide/Carbon
Nanotube Hybrid Film for Unique Performance Transistors
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Abstract
Here we report unique performance transistors based on
sol–gel
processed indium zinc oxide/single-walled carbon nanotube (SWNT) composite
thin films. In the composite, SWNTs provide fast tracks for carrier
transport to significantly improve the apparent field effect mobility.
Specifically, the composite thin film transistors with SWNT weight
concentrations in the range of 0–2 wt % have been investigated
with the field effect mobility reaching as high as 140 cm<sup>2</sup>/V·s at 1 wt % SWNTs while maintaining a high on/off ratio ∼10<sup>7</sup>. Furthermore, the introduction SWNTs into the composite thin
film render excellent mechanical flexibility for flexible electronics.
The dynamic loading test presents evidently superior mechanical stability
with only 17% variation at a bending radius as small as 700 μm,
and the repeated bending test shows only 8% normalized resistance
variation after 300 cycles of folding and unfolding, demonstrating
enormous improvement over the basic amorphous indium zinc oxide thin
film. The results provide an important advance toward high-performance
flexible electronics applications