Optimized Thermoelectric
Properties of Sb-Doped Mg<sub>2(1+<i>z</i>)</sub>Si<sub>0.5–<i>y</i></sub>Sn<sub>0.5</sub>Sb<sub><i>y</i></sub> through Adjustment
of the Mg Content
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Abstract
Mg<sub>2</sub>Si<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> compounds are low-cost and environmentally
friendly
thermoelectric materials expected to be applied as power generators
in the intermediate temperature range. Optimization of the thermoelectric
properties of Mg<sub>2</sub>Si<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> compounds can be accomplished by
the precise control and adjustment of the Mg content. A series of
Mg<sub>2(1+<i>z</i>)</sub>Si<sub>0.5–<i>y</i></sub>Sn<sub>0.5</sub>Sb<sub><i>y</i></sub> (0 ≤ <i>y</i> ≤ 0.015 and 0 ≤ <i>z</i> ≤
0.15) compounds with controlled Mg content were synthesized by a two-step
solid-state reaction method, followed by a spark plasma sintering
technique. On the basis of optimized thermoelectric properties via
doping with Sb, the effect of a variable content of Mg spanning from
understoichiometry to overstoichiometry has been systematically explored.
The results indicate that when the actual Mg content exceeds the stoichiometric
amount, the dominant point defects in Mg<sub>2(1+<i>z</i>)</sub>Si<sub>0.49</sub>Sn<sub>0.5</sub>Sb<sub>0.01</sub> compounds
are interstitial Mg and Si/Sn vacancies. At the same time, the electron
concentration is enhanced with increasing content of Mg. However,
when the actual Mg content is substoichiometric, the point defects
consist mainly of Mg vacancies that tend to counteract the doping
effect of Sb. Thus, the electron concentration of the nominal Mg<sub>2</sub>Si<sub>0.49</sub>Sn<sub>0.5</sub>Sb<sub>0.01</sub> compound
(in reality a 2 mol % deficiency of Mg) is markedly lower compared
with the Mg<sub>2.10</sub>Si<sub>0.49</sub>Sn<sub>0.5</sub>Sb<sub>0.01</sub> compound, which actually had a 2 mol % excess of Mg. Furthermore,
a modest overstoichiometry of Mg enhances the power factor and improves
the dimensionless figure of merit. The highest value of <i>ZT</i> = 1.25 at 800 K among the compounds was obtained on Mg<sub>2.20</sub>Si<sub>0.49</sub>Sn<sub>0.5</sub>Sb<sub>0.01</sub>, which had an
actual Mg excess of 5.5 mol %. The study suggests that point defects,
such as interstitial Mg and Si/Sn vacancies, which are created by
an overstoichiometric content of Mg, have a positive effect on the
electron concentration and thermoelectric properties of n-type Mg<sub>2</sub>Si<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub>-based compounds. This research has also established an essential
foundation for further optimization of the thermoelectric properties
of Mg<sub>2</sub>Si<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> compounds