We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a clean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurement reeveal well resolved fine structure at Auger SiL2.3VV transitions at 62 and 83 eV. These peaks can be attributed to Si---O and Si---N bonds. Furthermore, it is argued that the broadening in the SiLi2.3VV Auger transition at 83 eV at 300 K may be composed of two nearby peaks, which could be attributed to two different kinds of chemical bonding, Si---N and Si---O. The absence of a peak at 69 eV at room temperature strongly suggests the NO adsorption on a Si(100)2 × 1 surface to be molecular. Dissociation of NO on the Si(100)2 × 1 surface is observed at 550 K

Lakerveld, D.G.

Sasse, A.G.B.M.

Silfhout, A. van

English

van Silfhout, Arend

NARCIS 

The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

University of Twente Research Information

Surface Science 195 (1988) L167-L172 North-Holland, Amsterdam L167 S U R F A C E  SCIENCE L E T T E R S THE A D S O R P T I O N  O F  NITRIC  O X I D E  O N  A S I L I C O N  (100) 2 X 1 SURFACE STUDIED WITH AUGER ELECTRON SPECTROSCOPY A.G.B.M. SASSE, D.G.  L A K E R V E L D  and A. VAN S I L F H O U T  University of Twente, Faculty of Applied Physics. P.O. Box 217. 7500 AE Enschede, The Netherlands Received 3 September 1987; accepted for publication 20 October 1987 We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a dean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurements reveal wall resolved fine structure at Auger Si L2.3 w transitions at 62 and 83 eV. These peaks can be attributed to Si-O and Si-N bonds. Furthermore, it is argued that the broadening in the SiLi2,~W Auger transition at 83 eV at 300 K may be composed of two nearby peaks, which could be attributed to two different kinds of chemical bonding, Si-N and Si-O. The absence of a peak at 69 eV at room temperature strongly suggests the NO adsorption on a Si(100)2x 1 surface to be molecular. Dissociation of NO on the Si(100)2 x 1 surface is observed at 550 K. In the last decade substantial  research has been devoted to the nitridation of the clean Si(111) surface be means of adsorpt ion with ni trogen containing gas molecules (NO, N20,  N H  3, etc.) [1-3,5-9] .  The adsorption behaviour of these molecules on Si(100) is investigated with considerably less intensity [2,4,10]. To our knowledge only two AES investigations of N O  adsorbed on the Si(100) surface were published before: He and Smith [2] (T  > 1200 K), and Boszo and  Avouris [4] ( T - -  90 K). The aim of thi_s s tudy is to give a description of the N O  adsorption mechanism on the Si(100)2 x 1 surface at 300 and 550 K, by using Auger electron spectroscopy (AES). The adsorpt ion of NO on the Si(100)2 × 1 surface at 300 K is of  part icular  interest, because of its unique adsorption mechanism. In ref. [10] it has been argued that  N O  is p redominant ly  molecu- larly adsorbed at missing d imer  defects. A semi-quantitative atialysis of the coverage of  the different types of atoms in the surface region is made  from the K L L  Auger  spectra. F rom the Si L2.3VV Auger  spectra site specific chemical informat ion can be obta ined [11,12]. The gas-sol id  reactions were studied in ultrahigh vacuum (UHV) at a sample temperature  of 330 and 550 K. The experimental  setup, surface cleaning, and gas handl ing are described in detail elsewhere [9,10]. The pressure during the exposures is 2.5 × 10 -6 Torr  in all our experiments.  The static background pressure is about 6.0 x 10-11 Torr. 0039-6028/88/$03.50 © Elsevier Science Publishers B.V. (Nor th-Hol land Physics Publishing Division) L168 A.G.RM. Sasse et aL / Adsorption of NO on Si(lO0)2xl AES can be used to measure the relative concentration of oxygen a~d nitrogen absorbed on the clean Si(100)2 x I surface. The amount of adsorbed oxygen and nitrogen is proportional to the ratio of the oxygen and nitrogen KLL, 510 and 381 eV with respect to the silicon KLL (1619 eV) peak to peak (p-p) height in the first derivative ( d N ( E ) / d E )  of the energy distribution, i.e., Io,N/Isi. The information depth is of the order of 3 atomic layers which corresponds to an escape depth of about 9 ,~. The Auger spectra were  recorded using a primary beam energy of 3 keV, primary current density of ~ 200/~A/cm -2, modulation voltage of the energy analyzer of 9 Vp.p, a sweep rate of 1.0 eV/s and a lock-in time constant _< 1 s. T h e  angle of incidence of the primary electron beam on the silicon surface was 79 ° for the performed Auger experiments. The signal ratio Io,N//lsi was converted into a relative oxygen and nitrogen surface concentration using the equation, cx[ l = lx/sx E,, ( I , , /  S,, ) xl00 ,  (1) where Cx is the relative surface concentration of element x in percent, I x is the p-p height of the element x, and S x is the respective relative elemental sensitivity factor. The relative elemental sensitivity factors used in eq. (1) were OKLL: 0.50, NKLL: 0.30, and SigLi: 0.022 [13]. We estimate that the experi- mental accuracy in the determination of the surface concentration of the element x is about 15%. Relevant information concerning the chemical bonding can be extracted from the Si L2.3VV Auger spectra in the range of 40-85 eV. In this range of emerging electrons the information depth is about 1.5 atomic layers [12]. Recently it has been shown that careful measurements of the Si L2.3VV Auger spectrum in this energy range can lead to more definite conclusions about the binding state of an element adsorbed on the silicon surface [9,11,12]. The Si L2.3VV Auger spectra were recorded under the following operating condi- tions: primary beam energy 2 keV; primary current density of - 1 4 0  jaA/cm-2; modulation 2 Vp_p: sweep rate=0.5 eV/s  and a lock-in time constant < 1 s. The Si L:.3W Auger spectra between 40 and 85 eV of the several adsorp- tion experiments are shown in fig. 1. The SiL2,3VV spectrum of a freshly cleaned silicon surface is shown in fig. l a. We could resolve peaks at 43, 54, 74, 81, and 91 eV. The 91 eV is not shown in fig. 1. The peaks at 81 ard 91 eV are associated with real SiL2.3V3, r Auger • . . . .  :"~ [14]. ,,,,,,~l,~,,ns The 91 eV peak is called the Si main peak for the Si-Si bond. The peak at 74 eV is the first plasmon loss peak of the main peak [15-17]. It is suggested that the 54 eV peak is the second order plasmon loss peak of the main peak [14,17], but this is not generally accepted [15]. The Coster-Kronig transition (LIL2.3V) can be attributed to the peak of 43 eV [14]. A.G.B.M. Sasse et aL / Adsorl;tion of  N O  on Si(lO0)2X 1 L169 m D L Ld 13 7 T3 a ! I 4O 55 7O 85 eV Fig. l. SiL2.~W * '  ~ spectra ot ~a, clean Si(100); (b) Si(100) exposed to 2 .0x 103 L N O  at 300 K; (c) Si(100) exposed to 2.0x103 L NO at 550 K; (d) Si(~')0) surface in ~,,,¢~x heated to 1050 K after finishing the exposure. Fig. l b  shows the spectrum for NO adsorption at 300 K on Si(100). When the pressure is kept constant (2.5 x 10 -6 Torr) we obtained equal Si L2.3VV Auger spectra for exposures between 2.0 × 102 and 2.0 X 104 L. The main peak at 91 eV is shifted downwards by 1 eV. Due to adsorption of NO at a silicon surface new peaks are observed at 62 and 83 eV. the  83 eV peak as well as the 62 eV peak are well known in L2.3W Auger measurements of nitridation on the S i ( l l l )  surface [7,18-20], however the Sil  x3VV Auger transition at 83 and 62 eV can also be assigned to the S i -O bond [9]. The broadening of the Auger transition at 83 eV in fig. lb, relative to that of fig. lc, su~,gests that two adjacent peaks are involved, which are due to a slight degeneration of the strength of the Si-N and the Si-O bond. This observation is consistent with the KLl Auger measurements, which yield a concentration of 7 + 1% nitrogen and ~; + 1% oxygen on the silicon surface at all performed exposures. Therefore, we believe that at 300 K these bonds contribute both to the 62 eV peak and the 83 eV peak. L170 A.G.B.M. Sasse et al. / Adsorption of NO on Si(lO0)2× 1 When the sample, heated at 550 K, was exposed to 2.0 x 10 3 L NO (fig. lc) the same peaks were observed as in fig. lb, but also a new peak emerges at 69 eV. In ref. [9] and references therein it is concluded that this peak can be associated with the forming of more bulk-like oxide. This bulk-like oxide can be formed, after dissociation of the NO molecule, by allowing diffusion of atomic oxygen through the surface layer [21,22]. The absence of the Auger transition at 69 eV in the SiL2,3 w spectrum at 300 K (fig. lb) suggests therefore molecular adsorption of NO. That dissociation may occur is also consistent with the KLL Auger measurements, which yield a concentration of 12 -+_ 1% nitrogen and 7 + 1% oxygen on the silicon surface. These percentages agree with the r~sults of Wiggins et al. [1] for the Si(l l l)  surface. The difference in the amount of the oxygen and nitrogen concentration on the surface can be explained by the increase of the activation energy through heating of the silicon sample and new adsorption sites become available due to desorption of SiO [1]. In r- D _a [_ © W v Z I I t I I X ' ,  ~3 I I 0 60 120 180 eV Fig. 2. The shape of the background in the N(E)  Auger spectrum between 10 and 180 eV of (a) clean Si(100) surface (solid line); (b) Si(100) surface exposed to 2.0 × 103 L NO at 300 K (dashed line). A.G.B.M. Sasse et ai. / Adsorption of NO on Si(lO0)2× 1 L171 After exposing the sample to NO at 550 K, the sample was heated to 1050 K. The Auger transition at 69 eV disappeared, but other peaks still could be observed (fig. ld). No oxygen could be detected with Auger KLL measure- ments. The amount of nitrogen (12%) remained the same. These peaks can be fully attributed to the Si-N bonds, because of the desorption of oxygen as SiO [1]. The broadening of the 83 eV peak in fig. l d  became significantly smaller as has been observed in fig. lb  and supports the suggestion of the occurrence of two adjacent peaks at 83 eV at 300 K. The slope of the curve, in the lower energy part of the Si L2,3 w Auger spectra after adsorption of NO is increased. An enlargement of the background is responsible for this phenomenon (fig. 2). The difference in the background after adsorption of NO can be explained by the change in the potential of the surface due to chemisorbed NO molecules on the Si(100) surface, and caused a difference in the energy distribution of the secondary electrons [17]. "~ The Auger transition at 54 and 74 eV which appear in all spectra of fig. 1 is not well understood yet. The 74 eV peak can be associated with the first order plasmon loss, but the difference in its shape could be an indication that the Si-N bonds as well as the Si-O bonds are involved too in this transition. In summary, we conclude that at room temperature NO is adsorbed as a molecule at the Si(100)2 × 1 surface. Furthermore, it is argued that the broadening in the Auger transition at 83 eV at 300 K is composed of two nearby peaks. These two peaks could be attributed two different kinds of chemical bonding, Si-N and Si-O. Dissociation of the NO molecule is observed during adsorption when the sample is heated at 550 K. We also want to emphasize, that careful measurements of the L2.3W Auger spectra can lead to a more definite conclusion about the binding state of an element adsorbed on a silicon surface. References [1] M.D. Wiggins, R.J. Baird and P. Wynblatt, J. Vacuum Sci. Technol. 18 (1981) 965. [21 D.R. He and F.W. Smith, Surface Sci. 154 (1985) 347. [3] M. Miyamura, Y. Sakisaka, M. Nishijima and M. Onchi, Proc. 7th Intern. Congr. and 3rd Intern. Conf. on Solid Surfaces, Vienna, 1977. [4] F. Boszo and Ph. Avouris, Abstract SS1-We A2 in the "final program" of the 10th Intern. Conf. on Solid Surface and 33rd Natl. Symp. of the American Vacuum Society. [5] T. lsu and K. Fujiwara, Solid State Commun. 42 (1977) 477. [6] M. Nishijima and K. Fujiwara, Solid State Commun. 24 (1977) 101. [7] M. Nishijima, H. Kobayashi, K. Edamota and M. Onchi, Surface Sci. 137 (1984) 437. [8] M~ Nish_Jjima, K. Eda_m.oto, Y. Kubota, H. Kobayash,." and M. Onehi, Surhee Sci. !58 (!985) 422. [9] E.G. Keim, L. Wolterbeek and A. van Silfhout, Surface Sci. 180 (1987) 565. [10] A.G.B.M. Sasse, P.M. Kleinherenbrink and A. van Si~fhout, Surface Sci., to be submitted. [11] D.E. Ramaker, in: Spectroscopy as a Probe of Valence Bonds and Bands, Vol. 4 of Chemistry and Physics of Solid Surfaces, Eds. R. Vanselow and R. Howe (Springer, Berlin, 1982) p. 19. L172 A.G.B.M. Sasse et al. / Adsorption of NO on Si(lO0)2× 1 [12] R. Weissmann and K. Muller, Surface Sci. Rept. 1 (1981) 251. [13] L.E. Davis, N.C. MacDonald, P.W. Palmberg, G.E. Riach and R.E. Weber, Handbook of Auger Electron Spectroscopy, 2nd ed. (Perkin-Elmer, Eden Prairie, MN, 1976). [14] J.T. Grant and T.W. Haas, Surface Sci. 23 (1970) 347. [15] H'.G. Maguire and P.D. Augustus, J. Phys. C4 (1971) 283. [16] R. Weissmann, W. Schnellhammer, R. Koshatzky and K. Muller, Appl. Phys. 14 (1977) 283. [17] W.M. Mularie and T.W. Rusch, Surface Sei. 19 (1970) 469. [18] A.G. Schrott, Q.X. Su and S.C. Fain, Jr., Surface Sci. 123 (1982) 223. [19] A.G. Schrott and S.C. Fain, Jr., Surface Sci. 123 (1982) 204. [20] R. Hezel and N. Lieske, J. Appl. Phys. 51 (1980) 2566. [21] B. Lang, P. Scholler and B. Carriere, Surface Sci. 99 (1980) 103. [22] C.M. Garner, I. Lindau, C.Y. Su, P. Pianetta and W.E. Spicer, Phys. Rev. B19 (3979) 3944. 

Abstract SS1-We A2 in the &quot;final program&quot;

in: Spectroscopy as a Probe of Valence Bonds and Bands,

Surface Sci.

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The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

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