Three-dimensional
(3-D) fin-structured carbon nanotube field-effect
transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were
demonstrated on a large scale 8 in. silicon wafer. The fabricated
3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced
electrostatic gate controllability and superior charge transport.
A trigated structure surrounding the randomly networked single-walled
CNT channel was formed on a fin-like 3-D silicon frame, and as a result,
the effective packing density increased to almost 600 CNTs/μm.
Additionally, highly sensitive controllability of the threshold voltage
(<i>V</i><sub>TH</sub>) was achieved using a thin back gate
oxide in the same silicon frame to control power consumption and enhance
performance. Our results are expected to broaden the design margin
of CNT-based circuit architectures for versatile applications. The
proposed 3-D CNT-FETs can potentially provide a desirable alternative
to silicon based nanoelectronics and a blueprint for furthering the
practical use of emerging low-dimensional materials other than CNTs
