Blank, D.H.A.

Chen, J.

Myoren, H.

Nakajima, K.

Rogalla, H.

Yamashita, T.

We successfully fabricated the high-T-c ramp-type junctions with PrBa2Cu3-xGaxO7-delta (PBCGO:x=0.1, 0.4) barriers on MgO substrates. The junctions showed RSJ-like I-V curves with increased thermally and voltage activated conductivity. The IcRn products for these junctions scale very well with the Ga-doping. Using far infrared laser radiations, we confirmed terahertz (THz) responses of these junctions. The junction with PBCGO (x=0.4) had IcRn products of similar to 1mV at 4.2K and showed Shapiro steps with THz-wave irradiation, without any additional antenna structure

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Terahertz response of high-Tc ramp-type junctions on MgO

http://purl.utwente.nl/publications/25625

Terahertz response of high-Tc ramp-type junctions on MgO

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