Additional file 1: of Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Abstract

A typical SEM image of the GaSb nanowires grown on InAs stems with relatively high TMGa and TMSb flow rates (S1), a typical SEM image of the InAs stems before the GaSb growth (S2), a typical SEM image of the GaSb nanowires grown on InAs stems at 545 °C (S3), a top-view SEM image of the GaSb nanowires directly grown on Si (111) substrates (S4), and EDS spectra of point analyses from different positions in a GaSb nanowire (S5). (DOCX 510 kb