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在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用
Authors
徐万劲
武作兵
邢启江
Publication date
1 January 2001
Publisher
Abstract
从理论上计算了厚度为110nm的W_(0.95)Ni_(0.05)金属薄膜应变条在InGaAsP/InP双异质结构中形成的应力场分布,及由应力场分布引起的折射率变化。在W_(0.95)Ni_(0.05)金属薄膜应变条半导体中0.2-2μm深度范围内,由应变引起条形波导轴中央的介电常数ε相应增加2.3×10~(-1)-2.2×10~(-2)(2μm应变条宽)和1.2×10~(-1)-4.1×10~(-2)(4μm应变条宽)。同时,测量了由W_(0.95)Ni_(0.05)金属薄膜应变条所形成的InGaAs/InP双异质结光弹效应波导结构导波的近场光模分布。从理论计算和实验结果两方面证实了InGaAsP/InP双异质结光弹效应波导结构对侧向光具有良好的限制作用
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Institute Of Mechanics,Chinese Academy of Sciences
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Last time updated on 12/02/2018
Institute Of Mechanics,Chinese Academy of Sciences
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:dspace.imech.ac.cn:311007/...
Last time updated on 25/11/2020