Erbium related centers in CZ-silicon

Abstract

CZ Si implanted with Er shows the same cubic crystal field splitting of the 1.54 mu m luminescence as FZ-SI together with otter, defect- and oxygen correlated Pr complexes. The cubic centers exhibit somewhat shorter radiative life- and excitation times. The 100 times higher luminescence yield of CZ samples is thus attributed to the improved incorporation and to the passivation of recombination centers. The latter conclusion is supported by DLTS results which indicate complicated annealing behaviour.</p