A monolithic integrated wide-band amplifier is presented, which consists of two 0.3 μm HEMT-stages in GaAs/GaAlAs-Technology. The main signal path consists of a coplanar waveguide, which interfaces conveniently to the HEMT-cells. A feedback circuit with R, L and C connects gate and drain. To close the feedback loop small scale microstrip lines were combined with CPW /1, 2, 4/. Matching is done with a LC circuit at the gate and a combination of transmission line and capacitor at the drain. In addition there are some other passive elements for biasing, which reduce external components to a minimum. All element models were checked with measured data and placed into a CAD-library for easy use in the design process