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一种基于梯度叠层缓冲层薄膜的外延生长Al<sub>m<-sub>Ga<sub>1<-sub>‑<sub>m<-sub>N的方法
Authors
叶继春
孟凡平
+5 more
李俊梅
郭炜
韩灿
高平奇
黄峰
Publication date
4 July 2017
Publisher
Abstract
本发明涉及一种基于梯度叠层缓冲层薄膜的外延生长AlmGa1‑mN的方法。具体地,本发明公开了一种复合材料以及所述复合材料的制备方法和应用。所述复合材料所包含的外延薄膜的位错密度、薄膜裂纹密度和薄膜表面粗糙度得到综合改善,因此可获得晶体质量、薄膜完整性和表面形貌平衡提升的复合材料,同时,基于这种复合材料可以大大缩短外延芯片的生长时间,全面提升包含所述复合材料的光电器件或功率器件的性能和产率。所述方法具有工艺简单、成本低、产品良率高等特点
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Last time updated on 22/01/2018