New semiconductor technologies, used in passive
microwave applications, allow the integration of passives
with high quality factors and the fabrication of novel RFMEMS
components for switches and tunable capacitors and
resonators. The use of these technologies results in a strong
reduction of the size and the power consumption of
wearable microwave systems. The scaling of silicon
transistors, following Moore’s law, results in RF-CMOS
devices approaching the performance of III-V and SiGe
devices but at a considerably lower cost and much higher
integration capability. The introduction of GaN based
technologies offering new possibilities in the field of power
microwave devices is discussed
