This paper presents RF-MEMS devices,
which are based on low-complexity fabrication technologies.
Tuneable filters and phase shifting elements for Ka-band
have already been realized by using a fabrication process
which requires only two photo-lithographic steps. Adding
just one more lithographic process step results in the
realization of high performance switching devices with
insertion losses of -0.2dB at 30GHz. Due to their low
fabrication complexity, all these RF-MEMS devices
minimize technological challenges and have the potential for
being highly reliable due to their design principle. In
addition, these technologies may pave the way for the
monolithic integration of RF-MEMS based circuits with
compound semiconductor MMICs for highly integrated and
high performance multi-functional circuits
