This paper presents an investigation of the low
frequency noise properties of SiGe based n MODFET’s
through the characterization of both the gate current noise
and the drain current noise including their correlation.
Measurements versus bias and gate geometry have shown
that this noise is generated through mobility fluctuations or
carrier diffusion at the gate terminal and that carrier
number fluctuations are involved in drain current
fluctuations. Microwave residual phase noise measurements
have shown that the up-conversion effect mainly occurs on
the drain current noise
