A comprehensive study of the
photoluminescence spectra and the electrophysical
parameters have been performed on GaAs epitaxial layers
grown by the low temperature liquid phase epitaxy (LPE)
method from solution-melts doped with Yb impurity. The
characteristic variations of the relative intensity of the
components of the PL spectra, electroconductivity,
concentration and mobility of the free charge carriers in the
grown layers where established as a function of the
concentration of the Yb impurity in the initial solutionmelts.
A possible mechanism of the influence of the Yb
impurity on the native defects and background impurities in
the epitaxially grown GaAs is proposed
