The harmonic and intermodulation distortions of SOI MOSFETs are studied with the help of the Wiener-Volterra
series. Simple relationships are given and validated through
Large-Signal Network Analyser measurements. The simplicity
of the formulation makes it attractive to circuit designers.
Furthermore, it may be used to determine the validity range of
low-frequency based distortion characterization techniques. It is shown that the dominant poles of the HD for a 0.25 µm Partially Depleted SOI MOSFET lies at a few GHz, depending on the load impedance and the biasing and that its IMD3 depends on the tone separation
