Heterojunction bipolar transistors with
carbon-doped SiGe base layer (SiGe:C HBTs) showing fT
and fmax values as high as 200 GHz have been developed and
integrated into a 0.25µm CMOS platform. The combination
of these high-performance HBTs with a modern CMOS
backbone and a full menu of passive elements enables the
fabrication of advanced wireless communication and radar
systems. In this paper, we address the application of IHP’s
200GHz SiGe:C BiCMOS process in two fields, the wireless
communication in the 60GHz ISM band and radar
applications at 24GHz, 77GHz and at frequencies above
94GHz
