A novel experimental system for observing the dependence of the trapping states on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system for observing the memory effect in these devices. The results indicate that the trapping effect is more serious than may be thought

Fernandez, T.

Mediavilla, A.

Rodriguez-Tellez, J.

Tazon, A.

English

AMS Acta

PSEUDO-RANDOM PULSED IV CHARACTERISATION SYSTEMFOR GAAS MESFET/HEMT DEVICESJ. Rodriguez-Tellez University of Bradford, Department of Electronic & Electrical Engineering, Bradford, West Yorkshire, BD7 1DP,Englande-mail j.rodrigueztellez@bradford.ac.ukT. Fernandez, A Mediavilla, A TazonUniversidad de Cantabria, Departamento de Comunicaciones, Av. De los Castros, Santander, Spaine-mail tomas@.dicom.unican.esABTRACTA novel experimental system for observing the dependence of the trapping states on electric field for GaAsMESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system forobserving the memory effect in these devices. The results indicate that the trapping effect is more serious than may bethought.INTRODUCTIONIn this paper a new measurement technique for observing the dependence of the trapping effect on electric fieldfor GaAs devices is presented. The new experimental method also enables the dependence of the traps on self-heatingor ambient temperature to be considered. The results obtained with the new procedure are compared with experimentaldata obtained with conventional pulsed and static IV characterisation systems. The results indicate that the effect of thetrapping states in the MESFET device could be more serious than has been thought of to date.MEASUREMENTS AND DEVICESThe measurement system employed to investigate the frequency dispersion or hysteresis effect in GaAsdevices is shown in Figure 1 Fernandez[1]. The static and pulse power supplies associated with the gate-source anddrain-source junctions are identical and completely independent. Through program control a wide range of differentmeasurements can be carried out. For the purposes of this paper the most relevant are:(i) Static IV measurements: These can be performed using different  sweep rates to enable the extent of theself-heating effect to be observed. For the results presented in this paper a one second interval wasemployed for each bias point prior to measuring the drain current. This time is sufficiently long for thedevice to reach equilibrium conditions from a thermal point of view.(ii) Pulsed IV measurements: These were performed by pulsing the gate-source and drain-source terminalsfrom different static points. Since the pulse widths employed were of 1µs width (with a rise and fall-time of50ns) with a period of 1ms, no self-heating effect from the dynamic bias conditions are introduced into thedevice Teyssier et al[2], Parker and Scott[3] and Rodriguez-Tellez et al[4]. Self-heating effects are,therefore, determined by the static conditions employed for the pulse measurements.. The drain currentvalue obtained from this measurement is the average of 16 readings which are taken once the pulse hassettled.(iii)        Pseudo-random pulse IV measurements: This is a novel pulse IV measurement idea which enables thetrue extent of the dependency of the frequency dispersion or hysteresis effect on electric field to beobserved. A clearer understanding of the method used to implement this measurement can be obtained byconsidering a specific case. If it assumed that the static supplies are set to VDS=0V and VGS=-1V(the devicein the off condition and therefore no self-heating effects) and the drain current at the dynamic bias point ofvds=3V vgs=-0.4V is to be measured then the two step process shown in Figure 1 is employed. Theamplitude of the pulses denoted as vds random and vgs random in Figure 1 are determined using a pseudo-randomalgorithm. The maximum and minimum values of these pulses is constrained by the user to fall within aspecified bias range. For this case this could be in the 0V to 4V range for the drain-source junction and –1Vto 0V for the gate-source junction. The base potential of these pulses is clearly the VDS=0V VGS=-1V staticpoint. After 1µs a further pulse is launched whose base potential is the pseudo-random value and the finalpotential is the destination value. Once the value of the drain current is noted the pulse amplitude returns tothe static bias value and remains there for 1ms. The drain current at the same dynamic point is thenmeasured again using different pseudo-random values. If this process is repeated a large number of timesthen an accurate appreciation of the hysteresis effect can be obtained. For the results presented in this papereach dynamic bias point was measured in this way using a 1000 samples. This provides a reasonablestatistical distribution and because of the speed by which this measurement system performs this task, it isan operation which can be performed quickly. In theory if the device is free of hysteresis effects then thevalue of the drain current at the point of interest should not vary since the measurement frequency is thesame and the thermal conditions of the device remains constant. As will be seen, however, this is not thecase and the hysteresis effect is quite significant. It is worth noting that the polarity of the pulses employedfor these measurements can be positive, negative or zero. This depends on the value of the static bias point,the value of the pseudo-random bias and the final or bias value to be measured.To demonstrate the results a 4 finger 225µm gate-width/finger MESFET device from GEC Marconi Materials ResearchLtd will be used as a demonstrator. Similar results have been observed with other devices. The device above is an ion-implanted device with a 0.5µm gate-length and a pinch-off voltage of –0.8V.EXPERIMENTAL RESULTSIn Figure 2 we show the measured drain current of the device at the vds=4V vgs=0V dynamic point as a functionof the pseudo-random drain-source and gate-source voltage. This data was measured from the static bias point ofVDS=0V VGS=-1Vand represents 1000 samples. The large change in the drain current as the electric field is varied oneither the gate-source or drain-source junctions is quite interesting. The low-pass filter type of characteristics as thedrain-source junction potential changes is also worthy of note. This large change in the drain current is also true at otherbias points. In Figure 3, for example, we compare the drain current of the device when measured with the pseudo-random method, the normal dc method and the normal pulsed method. For the normal pulsed method the static biaspoint corresponds to VDS=0V VGS=-1V. For the normal dc method a one second settling time was used to ensure thedevice reaches equilibrium conditions from a thermal point of view. In a previous article it was clearly proven that thedifferences between the pulsed (normal) and dc IV characteristics of the device were not entirely due to thermal butfrequency dispersion effects[4]. The pseudo-random data presented here re-enforces this point and shows that thememory effect is more serious than may have been thought. A similar picture emerges when a lower drain current areais considered as is shown in Figure 4. This effect is not of course restricted to the saturation region. In Figure 5, forexample, we compare the drain current as a function of the pseudo-random drain source voltage for different drain-source destination values. As can be seen in the linear region the dependency of the hysteresis on electric field is just asrelevant as in the saturation region. These results indicate a large charge trapping effect in the device equivalent to acapacitance in the region of a few nF. This has been confirmed with low frequency capacitance voltage measurementson the device the results of which will be published at a later date.The results presented above corresponds in all cases to a device which is at ambient temperature since theoperating conditions employed do not introduce any self-heating effect. The dc IV characteristics are clearly exemptfrom this and the self-heating effect will be significant for this case. As was demonstrated in an earlier paper, however,the self-heating effect introduces small changes to the IV characteristics of the device compared to the frequencydispersion effect. The effect of self-heating on the pseudo-random pulse IV data could, of course, be investigated bysimply altering the static bias point. This issue is however beyond the scope of this paper and will be considered at alater date.SUMMARY/CONCLUSIONSA new experimental system for observing the dependence of the memory effect in GaAs devices onelectric field has been presented and compared with conventional measurement idea. The results indicate a much largerchange in the device IV characteristics due to trapping effects than previously thought. This behaviour is true in thesaturation and linear regions of operation.REFERENCES[1] T. Fernandez, Y Newport, JM Zamarillo, A. Mediavilla & A. Tazon “High speed automated pulsed IV measurementsystem”, Sept 1993, 23rd European Microwave Conference, Madrid,  pp494-496[2] JP Teyssier, P Bouysse, Z. Ovarch, D. Baratand, T. Peyretaillade & R. Quere “40GHz/150ns versatile pulsedmeasurement system for microwave transistor isothermal characterisation”, Dec. 1998, IEEE Trans. Microwave Theoryand Techniques, Vol. 46, No. 12,  pp2043-2052.[3] AE Parker & JB Scott “Method for determining correct timing for pulsed I/V measurement of GaAs FET’s”, Sept.1995,  IEE Electronic letters, Vol. 31,  pp 1697-1698.[4] J. Rodriguez-Tellez, A. Mediavilla, T. fernandez & A. Tazon “A method for characterising frequency dispersion andthermal effects independently in GaAs FET’s”, Oct. 1999, European Microwave Conference, Munich, pp 399-402.Figure 1 Pulse characterisation systemFigure 2. Ids versus random Vds & VgsFigure 3 . Comparison of Ids for the Vgs=-0.4V curveVg,d,s finalVg,d,s randomVg,d,s staticVgs pulseVgs staticVds pulseVds static1msFigure 4. Comparison of Ids for the Vgs=-0.6V curveFigure 5. Ids vs random Vds for various Vds destinations

Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices

PSEUDO-RANDOM PULSED IV CHARACTERISATION SYSTEM
FOR GAAS MESFET/HEMT DEVICES
J. Rodriguez-Tellez
 University of Bradford, Department of Electronic & Electrical Engineering, Bradford, West Yorkshire, BD7 1DP,
England
e-mail j.rodrigueztellez@bradford.ac.uk
T. Fernandez, A Mediavilla, A Tazon
Universidad de Cantabria, Departamento de Comunicaciones, Av. De los Castros, Santander, Spain
e-mail tomas@.dicom.unican.es
ABTRACT
A novel experimental system for observing the dependence of the trapping states on electric field for GaAs
MESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system for
observing the memory effect in these devices. The results indicate that the trapping effect is more serious than may be
thought.
INTRODUCTION
In this paper a new measurement technique for observing the dependence of the trapping effect on electric field
for GaAs devices is presented. The new experimental method also enables the dependence of the traps on self-heating
or ambient temperature to be considered. The results obtained with the new procedure are compared with experimental
data obtained with conventional pulsed and static IV characterisation systems. The results indicate that the effect of the
trapping states in the MESFET device could be more serious than has been thought of to date.
MEASUREMENTS AND DEVICES
The measurement system employed to investigate the frequency dispersion or hysteresis effect in GaAs
devices is shown in Figure 1 Fernandez[1]. The static and pulse power supplies associated with the gate-source and
drain-source junctions are identical and completely independent. Through program control a wide range of different
measurements can be carried out. For the purposes of this paper the most relevant are:
(i) Static IV measurements: These can be performed using different  sweep rates to enable the extent of the
self-heating effect to be observed. For the results presented in this paper a one second interval was
employed for each bias point prior to measuring the drain current. This time is sufficiently long for the
device to reach equilibrium conditions from a thermal point of view.
(ii)  Pulsed IV measurements: These were performed by pulsing the gate-source and drain-source terminals
from different static points. Since the pulse widths employed were of 1µs width (with a rise and fall-time of
50ns) with a period of 1ms, no self-heating effect from the dynamic bias conditions are introduced into the
device Teyssier et al[2], Parker and Scott[3] and Rodriguez-Tellez et al[4]. Self-heating effects are,
therefore, determined by the static conditions employed for the pulse measurements.. The drain current
value obtained from this measurement is the average of 16 readings which are taken once the pulse has
settled.
(iii)        Pseudo-random pulse IV measurements: This is a novel pulse IV measurement idea which enables the
true extent of the dependency of the frequency dispersion or hysteresis effect on electric field to be
observed. A clearer understanding of the method used to implement this measurement can be obtained by
considering a specific case. If it assumed that the static supplies are set to VDS=0V and VGS=-1V(the device
in the off condition and therefore no self-heating effects) and the drain current at the dynamic bias point of
vds=3V vgs=-0.4V is to be measured then the two step process shown in Figure 1 is employed. The
amplitude of the pulses denoted as vds random and vgs random in Figure 1 are determined using a pseudo-random
algorithm. The maximum and minimum values of these pulses is constrained by the user to fall within a
specified bias range. For this case this could be in the 0V to 4V range for the drain-source junction and –1V
to 0V for the gate-source junction. The base potential of these pulses is clearly the VDS=0V GS=-1V static
point. After 1µs a further pulse is launched whose base potential is the pseudo-random value and the final
potential is the destination value. Once the value of the drain current is noted the pulse amplitude returns to
the static bias value and remains there for 1ms. The drain current at the same dynamic point is then
measured again using different pseudo-random values. If this process is repeated a large number of times
then an accurate appreciation of the hysteresis effect can be obtained. For the results presented in this paper
each dynamic bias point was measured in this way using a 1000 samples. This provides a reasonable
statistical distribution and because of the speed by which this measurement system performs this task, it is
an operation which can be performed quickly. In theory if the device is free of hysteresis effects then the
value of the drain current at the point of interest should not vary since the measurement frequency is the
same and the thermal conditions of the device remains constant. As will be seen, however, this is not the
case and the hysteresis effect is quite significant. It is worth noting that the polarity of the pulses employed
for these measurements can be positive, negative or zero. This depends on the value of the static bias point,
the value of the pseudo-random bias and the final or bias value to be measured.
To demonstrate the results a 4 finger 225µm gate-width/finger MESFET device from GEC Marconi Materials Research
Ltd will be used as a demonstrator. Similar results have been observed with other devices. The device above is an ion-
implanted device with a 0.5µm gate-length and a pinch-off voltage of –0.8V.
EXPERIMENTAL RESULTS
In Figure 2 we show the measured drain current of the device at the vds=4V vgs=0V dynamic point as a function
of the pseudo-random drain-source and gate-source voltage. This data was measured from the static bias point of
VDS=0V VGS=-1Vand represents 1000 samples. The large change in the drain current as the electric field is varied on
either the gate-source or drain-source junctions is quite interesting. The low-pass filter type of characteristics as the
drain-source junction potential changes is also worthy of note. This large change in the drain current is also true at other
bias points. In Figure 3, for example, we compare the drain current of the device when measured with the pseudo-
random method, the normal dc method and the normal pulsed method. For the normal pulsed method the static bias
point corresponds to VDS=0V VGS=-1V. For the normal dc method a one second settling time was used to ensure the
device reaches equilibrium conditions from a thermal point of view. In a previous article it was clearly proven that the
differences between the pulsed (normal) and dc IV characteristics of the device were not entirely due to thermal but
frequency dispersion effects[4]. The pseudo-random data presented here re-enforces this point and shows that the
memory effect is more serious than may have been thought. A similar picture emerges when a lower drain current area
is considered as is shown in Figure 4. This effect is not of course restricted to the saturation region. In Figure 5, for
example, we compare the drain current as a function of the pseudo-random drain source voltage for different drain-
source destination values. As can be seen in the linear region the dependency of the hysteresis on electric field is just as
relevant as in the saturation region. These results indicate a large charge trapping effect in the device equivalent to a
capacitance in the region of a few nF. This has been confirmed with low frequency capacitance voltage measurements
on the device the results of which will be published at a later date.
The results presented above corresponds in all cases to a device which is at ambient temperature since the
operating conditions employed do not introduce any self-heating effect. The dc IV characteristics are clearly exempt
from this and the self-heating effect will be significant for this case. As was demonstrated in an earlier paper, however,
the self-heating effect introduces small changes to the IV characteristics of the device compared to the frequency
dispersion effect. The effect of self-heating on the pseudo-random pulse IV data could, of course, be investigated by
simply altering the static bias point. This issue is however beyond the scope of this paper and will be considered at a
later date.
SUMMARY/CONCLUSIONS
A new experimental system for observing the dependence of the memory effect in GaAs devices on
electric field has been presented and compared with conventional measurement idea. The results indicate a much larger
change in the device IV characteristics due to trapping effects than previously thought. This behaviour is true in the
saturation and linear regions of operation.
REFERENCES
[1] T. Fernandez, Y Newport, JM Zamarillo, A. Mediavilla & A. Tazon “High speed automated pulsed IV measurement
system”, Sept 1993, 23rd European Microwave Conference, Madrid,  pp494-496
[2] JP Teyssier, P Bouysse, Z. Ovarch, D. Baratand, T. Peyretaillade & R. Quere “40GHz/150ns versatile pulsed
measurement system for microwave transistor isothermal characterisation”, Dec. 1998, IEEE Trans. Microwave Theory
and Techniques, Vol. 46, No. 12,  pp2043-2052.
[3] AE Parker & JB Scott “Method for determining correct timing for pulsed I/V measurement of GaAs FET’s”, Sept.
1995,  IEE Electronic letters, Vol. 31,  pp 1697-1698.
[4] J. Rodriguez-Tellez, A. Mediavilla, T. fernandez & A. Tazon “A method for characterising frequency dispersion and
thermal effects independently in GaAs FET’s”, Oct. 1999, European Microwave Conference, Munich, pp 399-402.
Figure 1 Pulse characterisation system
Figure 2. Ids versus random Vds & Vgs
Figure 3 . Comparison of Ids for the Vgs=-0.4V curve
Vg,d,s final
Vg,d,s random
Vg,d,s static
Vgs pulse
Vgs static
Vds pulse
Vds static
1ms
Figure 4. Comparison of Ids for the Vgs=-0.6V curve
Figure 5. Ids vs random Vds for various Vds destinations


AMS Acta - Alm@DL - Università di Bologna

PSEUDO-RANDOM PULSED IV CHARACTERISATION SYSTEM
FOR GAAS MESFET/HEMT DEVICES
J. Rodriguez-Tellez
 University of Bradford, Department of Electronic & Electrical Engineering, Bradford, West Yorkshire, BD7 1DP,
England
e-mail j.rodrigueztellez@bradford.ac.uk
T. Fernandez, A Mediavilla, A Tazon
Universidad de Cantabria, Departamento de Comunicaciones, Av. De los Castros, Santander, Spain
e-mail tomas@.dicom.unican.es
ABTRACT
A novel experimental system for observing the dependence of the trapping states on electric field for GaAs
MESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system for
observing the memory effect in these devices. The results indicate that the trapping effect is more serious than may be
thought.
INTRODUCTION
In this paper a new measurement technique for observing the dependence of the trapping effect on electric field
for GaAs devices is presented. The new experimental method also enables the dependence of the traps on self-heating
or ambient temperature to be considered. The results obtained with the new procedure are compared with experimental
data obtained with conventional pulsed and static IV characterisation systems. The results indicate that the effect of the
trapping states in the MESFET device could be more serious than has been thought of to date.
MEASUREMENTS AND DEVICES
The measurement system employed to investigate the frequency dispersion or hysteresis effect in GaAs
devices is shown in Figure 1 Fernandez[1]. The static and pulse power supplies associated with the gate-source and
drain-source junctions are identical and completely independent. Through program control a wide range of different
measurements can be carried out. For the purposes of this paper the most relevant are:
(i) Static IV measurements: These can be performed using different  sweep rates to enable the extent of the
self-heating effect to be observed. For the results presented in this paper a one second interval was
employed for each bias point prior to measuring the drain current. This time is sufficiently long for the
device to reach equilibrium conditions from a thermal point of view.
(ii) Pulsed IV measurements: These were performed by pulsing the gate-source and drain-source terminals
from different static points. Since the pulse widths employed were of 1µs width (with a rise and fall-time of
50ns) with a period of 1ms, no self-heating effect from the dynamic bias conditions are introduced into the
device Teyssier et al[2], Parker and Scott[3] and Rodriguez-Tellez et al[4]. Self-heating effects are,
therefore, determined by the static conditions employed for the pulse measurements.. The drain current
value obtained from this measurement is the average of 16 readings which are taken once the pulse has
settled.
(iii)        Pseudo-random pulse IV measurements: This is a novel pulse IV measurement idea which enables the
true extent of the dependency of the frequency dispersion or hysteresis effect on electric field to be
observed. A clearer understanding of the method used to implement this measurement can be obtained by
considering a specific case. If it assumed that the static supplies are set to VDS=0V and VGS=-1V(the device
in the off condition and therefore no self-heating effects) and the drain current at the dynamic bias point of
vds=3V vgs=-0.4V is to be measured then the two step process shown in Figure 1 is employed. The
amplitude of the pulses denoted as vds random and vgs random in Figure 1 are determined using a pseudo-random
algorithm. The maximum and minimum values of these pulses is constrained by the user to fall within a
specified bias range. For this case this could be in the 0V to 4V range for the drain-source junction and –1V
to 0V for the gate-source junction. The base potential of these pulses is clearly the VDS=0V VGS=-1V static
point. After 1µs a further pulse is launched whose base potential is the pseudo-random value and the final
potential is the destination value. Once the value of the drain current is noted the pulse amplitude returns to
the static bias value and remains there for 1ms. The drain current at the same dynamic point is then
measured again using different pseudo-random values. If this process is repeated a large number of times
then an accurate appreciation of the hysteresis effect can be obtained. For the results presented in this paper
each dynamic bias point was measured in this way using a 1000 samples. This provides a reasonable
statistical distribution and because of the speed by which this measurement system performs this task, it is
an operation which can be performed quickly. In theory if the device is free of hysteresis effects then the
value of the drain current at the point of interest should not vary since the measurement frequency is the
same and the thermal conditions of the device remains constant. As will be seen, however, this is not the
case and the hysteresis effect is quite significant. It is worth noting that the polarity of the pulses employed
for these measurements can be positive, negative or zero. This depends on the value of the static bias point,
the value of the pseudo-random bias and the final or bias value to be measured.
To demonstrate the results a 4 finger 225µm gate-width/finger MESFET device from GEC Marconi Materials Research
Ltd will be used as a demonstrator. Similar results have been observed with other devices. The device above is an ion-
implanted device with a 0.5µm gate-length and a pinch-off voltage of –0.8V.
EXPERIMENTAL RESULTS
In Figure 2 we show the measured drain current of the device at the vds=4V vgs=0V dynamic point as a function
of the pseudo-random drain-source and gate-source voltage. This data was measured from the static bias point of
VDS=0V VGS=-1Vand represents 1000 samples. The large change in the drain current as the electric field is varied on
either the gate-source or drain-source junctions is quite interesting. The low-pass filter type of characteristics as the
drain-source junction potential changes is also worthy of note. This large change in the drain current is also true at other
bias points. In Figure 3, for example, we compare the drain current of the device when measured with the pseudo-
random method, the normal dc method and the normal pulsed method. For the normal pulsed method the static bias
point corresponds to VDS=0V VGS=-1V. For the normal dc method a one second settling time was used to ensure the
device reaches equilibrium conditions from a thermal point of view. In a previous article it was clearly proven that the
differences between the pulsed (normal) and dc IV characteristics of the device were not entirely due to thermal but
frequency dispersion effects[4]. The pseudo-random data presented here re-enforces this point and shows that the
memory effect is more serious than may have been thought. A similar picture emerges when a lower drain current area
is considered as is shown in Figure 4. This effect is not of course restricted to the saturation region. In Figure 5, for
example, we compare the drain current as a function of the pseudo-random drain source voltage for different drain-
source destination values. As can be seen in the linear region the dependency of the hysteresis on electric field is just as
relevant as in the saturation region. These results indicate a large charge trapping effect in the device equivalent to a
capacitance in the region of a few nF. This has been confirmed with low frequency capacitance voltage measurements
on the device the results of which will be published at a later date.
The results presented above corresponds in all cases to a device which is at ambient temperature since the
operating conditions employed do not introduce any self-heating effect. The dc IV characteristics are clearly exempt
from this and the self-heating effect will be significant for this case. As was demonstrated in an earlier paper, however,
the self-heating effect introduces small changes to the IV characteristics of the device compared to the frequency
dispersion effect. The effect of self-heating on the pseudo-random pulse IV data could, of course, be investigated by
simply altering the static bias point. This issue is however beyond the scope of this paper and will be considered at a
later date.
SUMMARY/CONCLUSIONS
A new experimental system for observing the dependence of the memory effect in GaAs devices on
electric field has been presented and compared with conventional measurement idea. The results indicate a much larger
change in the device IV characteristics due to trapping effects than previously thought. This behaviour is true in the
saturation and linear regions of operation.
REFERENCES
[1] T. Fernandez, Y Newport, JM Zamarillo, A. Mediavilla & A. Tazon “High speed automated pulsed IV measurement
system”, Sept 1993, 23rd European Microwave Conference, Madrid,  pp494-496
[2] JP Teyssier, P Bouysse, Z. Ovarch, D. Baratand, T. Peyretaillade & R. Quere “40GHz/150ns versatile pulsed
measurement system for microwave transistor isothermal characterisation”, Dec. 1998, IEEE Trans. Microwave Theory
and Techniques, Vol. 46, No. 12,  pp2043-2052.
[3] AE Parker & JB Scott “Method for determining correct timing for pulsed I/V measurement of GaAs FET’s”, Sept.
1995,  IEE Electronic letters, Vol. 31,  pp 1697-1698.
[4] J. Rodriguez-Tellez, A. Mediavilla, T. fernandez & A. Tazon “A method for characterising frequency dispersion and
thermal effects independently in GaAs FET’s”, Oct. 1999, European Microwave Conference, Munich, pp 399-402.
Figure 1 Pulse characterisation system
Figure 2. Ids versus random Vds & Vgs
Figure 3 . Comparison of Ids for the Vgs=-0.4V curve
Vg,d,s final
Vg,d,s random
Vg,d,s static
Vgs pulse
Vgs static
Vds pulse
Vds static
1ms
Figure 4. Comparison of Ids for the Vgs=-0.6V curve
Figure 5. Ids vs random Vds for various Vds destinations


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Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices

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