Microsystems technology is increasingly comprised of multi-function devices and materials. Heterogeneous integration technologies are being developed to enable the flexible integration of high-performance devices, materials,and circuits.In our approach,the processing required for integration,such as substrate removal and bonding,is coupled with pre-and post-processing to enable new device and materials configurations not achieved in standard fabrication sequences.Materials and device processes and designs must be considered differently in the context of integration.Herein,we examine these issues specifically for InAs-,InP-and GaN-based heterojunction electronic and optoelectronic device integration processes
