Any electronic device, regardless of its function, needs a reference voltage
source that feeds reliably, i.e., which generates a constant voltage, upstream and
regardless of external environmental conditions, such as temperature. Since such
a characteristic negatively influences the behavior of the devices, whose base elements
are transistors, it is essential to design a circuit that provides a voltage
which is invariant over a temperature range.
In this work is designed a circuit that is responsible for generating a reference
voltage using only thin film transistors or TFTs, on glass substrate. However,
in order to validate the concept used in the mentioned transistors, it is also
dimensioned and simulated the proposed circuit in 130 nm CMOS technology,
where the respective results are expected to be comparative between the two
technologies. For CMOS technology, for a nominal reference voltage of 124,0 mV,
Cadence simulation reveals ±2,2 ppm/ºC temperature coefficient, between -20
°C and 100 °C. The power consumptions are and 1,434 mW and 4,566 mW for
both CMOS and IGZO-TFT technologies, respectively
