Aerosol deposition (AD) is a promising additive manufacturing method to fabricate low-cost, scalable films at room temperature, but has not been considered for semiconductor processing, so far. The successful preparation of cesium lead tribromide (CsPbBr) perovskite films on interdigitated indium tin oxide (ITO) electrodes by means of AD is reported here. The – µm thick layers are dense and have good adhesion to the substrate. The orthorhombic Pnma crystal structure of the precursor powder was retained during the deposition process with no signs of defect formation. The formation of electronic defects by photoluminescence spectroscopy is investigated and found slightly increased carrier recombination from defect sites for AD films compared to the powder. A nonuniform defect distribution across the layer, presumably induced by the impact of the semiconducting grains on the hard substrate surface, is revealed. The opto-electronic properties of AD processed semiconducting films is further tested by electrical measurements and confirmed good semiconducting properties and high responsivity for the films. These results demonstrate that AD processing of metal halide perovskites is possible for opto-electronic device manufacturing on D surfaces. It is believed that this work paves the way for the fabrication of previously unimaginable opto-electronic devices by additive manufacturing
