Transmission electron microscopy (TEM) characterisation of thermally grown RuO2 thin films

Abstract

RuO2 thin film fabricated by rf- sputtering from a pure Ru target and subsequently oxidized at 600C 30 minutes under O2/N2 gas was studied by transmission electron microscopy (TEM). The un-oxidized Ru grains are found at the bottom of the film in broken segments; whereas the oxidized RuO2 grains are found on top of the Ru grains but are frequently in direct contact with the SiO2 layer. The observations partially support the work function measurement of such films in a previous study