Semiconducting Silicon (Si) nanowires (NWs) have been widely investigated for their potential to function as highly sensitive and selective sensors for both chemical and biological purposes. A key point of this sensing method is to be real-time and label-free. Several interesting sensing assays have been demonstrated such as sensing of ions, proteins, DNA and viruses[1-3]. The available approaches of silicon nanowire fabrication usually use some advanced lithographic techniques i.e., deep-UV, electron-beam or nanoimprint lithography to pattern silicon nanowires on SOI wafers. Recently, spacer nanowires patterned by a conventional anisotropic dry etch were used to form transistors. While this approach has the advantage of CMOS-compatibility, these techniques are extremely expensive and accessible only to large-scale integrated circuit manufacturers. While this approach delivers a cheap route for nanowire definition, nanowire volume control across the wafer remains challenging as the nanowire sidewall region generally receives unwanted etching