Ionic liquids/gels have been used to realize field-effect-transistors (FETs) with two dimensional (2D) transition metal
dichalcogenides (TMDs) [1]. Although near ideal gating has been reported with this biasing scheme, it suffers from
several issues such as, liquid nature of the electrolyte, its humidity dependency and freezing at low temperatures [2].
Recently, air-stable solid electrolytes have been developed, thanks to the advancement in battery technology [3].
Although insulator-to-metal transition has been reported, the realization of 2D TMD FETs on solid electrolytic
substrate has not been reported so far to the best of our knowledge [4]. In this work, we demonstrate a lithium ion (Liion) solid electrolytic substrate based TMD transistor and a CMOS amplifier, with near ideal gating efficiency
reaching 60 mV/dec subthreshold swing, and amplifier gain ~34, the highest among comparable inverte
