In weakly spin-orbit coupled materials, the spin-selective nature of
recombination can give rise to large magnetic-field effects, for example on
electro-luminescence from molecular semiconductors. While silicon has weak
spin-orbit coupling, observing spin-dependent recombination through
magneto-electroluminescence is challenging due to the inefficiency of emission
due to silicon's indirect band-gap, and to the difficulty in separating
spin-dependent phenomena from classical magneto-resistance effects. Here we
overcome these challenges to measure magneto-electroluminescence in silicon
light-emitting diodes fabricated via gas immersion laser doping. These devices
allow us to achieve efficient emission while retaining a well-defined geometry
thus suppressing classical magnetoresistance effects to a few percent. We find
that electroluminescence can be enhanced by up to 300\% near room temperature
in a seven Tesla magnetic field showing that the control of the spin degree of
freedom can have a strong impact on the efficiency of silicon LEDs