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Molecular beam epitaxy of topological insulator Bi₂Se₃
Authors
Yuxuan, 1986- Chen
Publication date
2 August 2012
Publisher
Abstract
textIn this thesis, I show my effort in growing atomically flat Bi₂Se₃ thin films using molecular beam epitaxy (MBE) method. Bi₂Se₃ is a kind of topological insulator, whose exotic surface states have been found in the samples that I grew.Physic
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Last time updated on 17/06/2013