The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

Abstract

We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode. The VMISTT has significant advantages over the metal-oxide-semiconductor field-effect transistor in device scaling. In order to allow room-temperature operation of the VMISTT, the tunnel oxide has to be optimized for the metal-to-insulator barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel insulator by oxidizing 7 and 10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 450-550 degrees C. Fowler-Nordheim tunneling was observed at low temperatures at bias voltage of 2 V and above and a barrier height of approximately 0.4 eV was calculated. Leakage currents present were due Schottky-barrier emission at room-temperature, and hopping at liquid nitrogen temperature