Semi-insulating silicon by deep level doping for radio frequency applications

Abstract

Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity increased nearly ten-fold. Interesting features, like trapping by end-of-range defects, out-diffusion and partial activation of Mn dopant atoms were observed