High field emission current density from Ga2O3 nanopillars

Abstract

Field emission from gallium oxide amp; 946; Ga2O3 nanopillars, etched by Ne ion milling on amp; 946; polymorph 100 single crystals, is reported. A stable field emission current, with a record density over 100 amp; 8201;A cm2 and a turn on field of amp; 8764;30 amp; 8201;V amp; 956;m, is achieved. We expect that the high field enhancement factor of about 200 at a cathode anode distance of 1 amp; 8201; amp; 956;m can be further increased by optimizing the shape of the nanopillar apex. This work demonstrates that the material properties combined with an appropriate nano patterning can make amp; 946; Ga2O3 competitive or better than other well established field emitter