Simulation of SRAM SEU Sensitivity at Reduced Operating Temperatures

Abstract

A new NanoTCAD-to-Spectre interface is applied to perform mixed-mode SEU simulations of an SRAM cell. Results using newly calibrated TCAD cold temperature substrate mobility models, and BSIM3 compact models extracted explicitly for the cold temperature designs, indicate a 33% reduction in SEU threshold for the range of temperatures simulated